Nanosecond-timescale low-error switching of 3-terminal magnetic tunnel junction circuits through dynamic in-plane-field assisted spin-hall effect
US10333058B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2017 |
| Grant date | Jun 25, 2019 |
| Priority date | — |
| Expiry date | Mar 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/325
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The disclosed technology provides various implementations of a device based on a spin Hall effect (SHE) and spin transfer torque (STT) effect. In one aspect, a device is provided to include a magnetic structure including a ferromagnetic layer having a magnetization direction that can be changed by spin transfer torque; a SHE layer that is electrically conducting and exhibits a spin Hall effect to, in response to an applied charge current, generate a spin-polarized current that is perpendicular to the applied charge current, the SHE layer located adjacent to the ferromagnetic layer to inject the spin-polarized current into the ferromagnetic layer; a first electrical contact in contact with the magnetic structure; a second electrical contact in contact with a first location of the SHE layer; a third electrical contact in contact with a second location of the SHE layer so that the first and second locations are on two opposite sides of the magnetic structure; a magnetic structure circuit coupled between the first electrical contact and one of the second and third electrical contacts to supply a current or a voltage to the magnetic structure; and a charge current circuit coupled betwee…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.