Semiconductor laser

US10333278B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Clemens Vierheilig · Tegernheim, DE
• Andreas Löffler · Neutraubling, DE

Key dates

• Filing date: Sep 27, 2016
• Grant date: Jun 25, 2019
• Expiry date: Sep 27, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/22
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A semiconductor laser includes a semiconductor layer sequence having an n-conducting n-region, a p-conducting p-region and an intermediate active zone, an electrically conductive p-contact layer that impresses current directly into the p-region and is made of a transparent conductive oxide, and an electrically conductive and metallic p-contact structure located directly on the p-contact layer, wherein the semiconductor layer sequence includes two facets forming resonator end faces for the laser radiation, in at least one current-protection region directly on at least one of the facets a current impression into the p-region is suppressed, the p-contact structure terminates flush with the associated facet so that the p-contact structure does not protrude beyond the associated facet and vice versa, and the p-contact layer is removed from at least one of the current-protection regions and in this current-protection region the p-contact structure is in direct contact with the p-region over the whole area.