Semiconductor laser device
US10333280B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 29, 2016 |
| Grant date | Jun 25, 2019 |
| Priority date | — |
| Expiry date | Sep 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A configuration of a DFB laser-based wavelength tunable laser is well known, but long resonators have difficulty in forming uniform resonators due to production variations, thereby inducing limitation in narrowing the spectral linewidth in the DFB laser-based wavelength tunable laser as well. In the semiconductor laser device of the present invention, a semiconductor laser that oscillates in a single mode and a low-loss lightwave circuit using SiO2 glass are arranged on the common substrate. The lightwave circuit is configured such that part of output light from the semiconductor laser propagates through a certain length of an optical path, and then is reflected by a reflector and is fed back to the semiconductor laser. Output light from the semiconductor laser and an input waveguide of the lightwave circuit can also be configured to be optically connected directly to each other. The present invention can provide a compact laser device with a narrowed spectral linewidth and stable wavelength controllability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.