Pixel array with embedded split pixels for high dynamic range imaging
US10334191B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2018 |
| Grant date | Jun 25, 2019 |
| Priority date | — |
| Expiry date | Mar 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel cell includes a second photodiode laterally surrounding a first photodiode in semiconductor material. The first and second photodiodes are adapted to photogenerate image charge in response to incident light. A floating diffusion is disposed in the semiconductor material proximate to an outer perimeter of the second photodiode. A first transfer gate is disposed proximate to the semiconductor material over a first channel region between the first and second photodiodes. The first transfer gate is coupled to transfer the image charge from the first photodiode to the second photodiode. A second transfer gate is disposed proximate to the semiconductor material over a second channel region between the second photodiode and the floating diffusion. The second transfer gate is coupled to transfer the image charge from the second photodiode to the floating diffusion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.