TFT substrate and manufacturing method thereof
US10338440B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2017 |
| Grant date | Jul 2, 2019 |
| Priority date | — |
| Expiry date | Jun 26, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/123
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention provides a TFT substrate and manufacturing method thereof. The TFT substrate comprises: base substrate, TFT layer, passivation layer and pixel electrode, stacked in above order; wherein the pixel electrode comprising: main electrode, and connection electrode connected to main electrode; the connection electrode connected to TFT layer through pixel electrode via; main electrode having a cross-like slit structure with branch electrode on four trunks of cross, and the connection electrode comprising a plurality of parallel stripe-shaped first branch electrodes, and a second branch electrode connected to the first branch electrodes; by disposing the first branch electrodes, the connection electrode having a shape similar to main electrode to make the main and connection electrodes having similar single slit diffraction when exposed to reduce or eliminate the photo-resist thickness difference in pixel electrode area in the 3M process to avoid display defect and improve yield rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.