Resistive content addressable memory based in-memory computation architecture

US10340007B2 · kind B2 · utility

Assignees

• King Abdullah University of Science and Technology · SA
• The Regents of the University of California · US

Inventors

• Khaled Nabil Salama · Thuwal, SA
• Mohammed Affan Zidan · Thuwal, SA
• Fadi Kurdahi · Irvine, US
• Ahmed Mohamed Eltawil · Irvine, US
• Hasan Erdem Yantir · Santa Ana, US

Key dates

• Filing date: Jun 3, 2016
• Grant date: Jul 2, 2019
• Expiry date: Jun 3, 2036

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C13/0023
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

Various examples are provided examples related to resistive content addressable memory (RCAM) based in-memory computation architectures. In one example, a system includes a content addressable memory (CAM) including an array of cells having a memristor based crossbar and an interconnection switch matrix having a gateless memristor array, which is coupled to an output of the CAM. In another example, a method, includes comparing activated bit values stored a key register with corresponding bit values in a row of a CAM, setting a tag bit value to indicate that the activated bit values match the corresponding bit values, and writing masked key bit values to corresponding bit locations in the row of the CAM based on the tag bit value.