Patent · US Active

Semiconductor wafer surface protection film and method for manufacturing semiconductor device

US10340172B2 · kind B2 · utility

1Cited by
0References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 1, 2016
Grant dateJul 2, 2019
Priority date
Expiry dateJul 1, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2221/68386
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

This semiconductor wafer surface protection film has a substrate layer A, an adhesive absorption layer B, and adhesive surface layer C, in the stated order. The adhesive absorption layer B comprises an adhesive composition containing a thermoset resin b1, said adhesive absorption layer B having a minimum value G′bmin of the storage elastic modulus G′b in the range of 25° C. to less than 250° C. of 0.001 MPa to less than 0.1 MPa, a storage elastic modulus G′b250 at 250° C. of 0.005 MPa or above, and a temperature at which G′bmin is exhibited of 50-150° C. The adhesive surface layer C has a minimum value G′cmin of the storage elastic modulus G′c in the range of 25° C. to less than 250° C. of 0.03 MPa.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.