Optoelectronic semiconductor device having electrode junction with low reflectivity
US10340262B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 28, 2018 |
| Grant date | Jul 2, 2019 |
| Priority date | — |
| Expiry date | Dec 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An optoelectronic semiconductor device is disclosed. The optoelectronic semiconductor device includes a matrix substrate including a matrix circuit and a substrate, and a plurality of microsized optoelectronic semiconductor elements disposed separately and disposed on the matrix circuit. Each of the microsized optoelectronic semiconductor elements includes a first electrode and a second electrode, the matrix circuit includes a plurality of third electrodes and a plurality of fourth electrodes. The first electrodes are coupled with and electrically connected with the third electrodes respectively, or the second electrodes are coupled with and electrically connected with the fourth electrodes respectively. Reflectivities of at least some of junctions between the first electrode and the third electrode, or reflectivities of at least some of junctions between the second electrode and the fourth electrode are less than 20%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.