Method for manufacturing thin film transistor, and thin film transistor
US10340294B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Oct 14, 2015 |
| Grant date | Jul 2, 2019 |
| Priority date | — |
| Expiry date | Oct 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
Disclosed is a method for manufacturing a thin film transistor. The method for manufacturing a thin film transistor includes: forming a patterned semiconductor layer and a patterned wiring layer on a substrate; and etching the wiring layer to form a channel part. Herein, the wiring layer includes a compensation layer and the compensation layer is formed from a material including a metal of a metal oxide component among components of a material forming the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.