CMOS image sensor

US10340304B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Dae-Sub Jung · Shanghai, CN
• Deyan Chen · Singapore, SG
• Xuejie Shi · Shanghai, CN

Key dates

• Filing date: Jun 26, 2018
• Grant date: Jul 2, 2019
• Expiry date: Jun 26, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/8037

Abstract

The present disclosure provides CMOS image sensors. A CMOS image sensor includes a substrate having a first region and a second region connecting with the first region at a first end of the first region; a transfer transistor formed on the surface of the substrate in the second region; a floating diffusion (FD) region formed in the surface of the substrate at one side of the transfer transistor in the second region; a third implanting region formed in the surface of the substrate 200 in the first region, being formed from a first implanting region; a second implanting region and an adjacent fifth implanting region formed under the third implanting region; and a fourth implanting region formed under the second implanting region and the fifth implanting region, being electrically connected with the third implanting region by the fifth implanting region.