Semiconductor device and manufacture thereof

US10340342B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Jianxiang Cai · Shanghai, CN
• Yiqi Wang · Troy, US
• Weili Zhao · Beijing, CN
• Xiaofang Yang · 安丰镇, CN
• JingGuo Jia · Shanghai, CN

Key dates

• Filing date: Jan 5, 2018
• Grant date: Jul 2, 2019
• Expiry date: Jan 5, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D10/051

Abstract

A semiconductor device and its manufacturing method are presented. The semiconductor device includes a collection region, a base region adjacent to the collection region, an emission region adjacent to the base region, and a doped semiconductor layer on the emission region. The width of the doped semiconductor layer is larger than the width of the emission region, a conductive type (e.g., P-type or N-type) of the doped semiconductor layer is the same as a conductive type of the emission region. In this inventive concept, the width of the doped semiconductor layer on the emission region is larger than the width of the emission region, that equivalently increases the width of the emission region, which in turn increases the DC amplification factor (β) and therefore improves the overall performance of the semiconductor device.