Epitaxial metallic transition metal nitride layers for compound semiconductor devices
US10340353B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2015 |
| Grant date | Jul 2, 2019 |
| Priority date | — |
| Expiry date | Jul 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for integrating epitaxial, metallic transition metal nitride (TMN) layers within a compound semiconductor device structure. The TMN layers have a similar crystal structure to relevant semiconductors of interest such as silicon carbide (SiC) and the Group III-Nitrides (III-Ns) such as gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and their various alloys. Additionally, the TMN layers have excellent thermal stability and can be deposited in situ with other semiconductor materials, allowing the TMN layers to be buried within the semiconductor device structure to create semiconductor/metal/semiconductor heterostructures and superlattices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.