Manufacturing method of thin-film transistor (TFT) array substrate
US10340354B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 19, 2017 |
| Grant date | Jul 2, 2019 |
| Priority date | — |
| Expiry date | Jan 24, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/123
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a thin-film transistor (TFT) array substrate, including: forming a gate layer, a gate insulating layer, an oxide semiconductor layer, a source/drain electrode layer and a pixel electrode layer on a base substrate. The step of forming the source/drain electrode layer and the pixel electrode layer includes: forming a transparent conductive film and a first metallic film on the oxide semiconductor layer in sequence, to form a stack layer of the transparent conductive film and the first metallic film, in which the transparent conductive film contacts the oxide semiconductor layer; and forming source electrodes, drain electrodes and pixel electrodes by a single patterning process on the stack layer of the transparent conductive film and the first metallic film. One patterning process is saved, the production time is shortened, and the production cost is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.