Method of manufacturing a thin film transistor
US10340365B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Apr 8, 2016 |
| Grant date | Jul 2, 2019 |
| Priority date | — |
| Expiry date | May 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/421
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a thin film transistor is provided, and includes: providing a substrate; depositing a buffer layer and patterning the buffer layer; sequentially depositing an insulation layer and a first metal layer, coating a photoresist on the first metal layer; metal etching the first metal layer; ashing the photoresist; metal etching the first metal layer of the lightly doped region; implanting ions to an active area; and removing the photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.