Reverse conducting IGBT

US10340373B2 · kind B2 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventors

• Xiaorong Luo · Chengdu, CN
• Gaoqiang Deng · Chengdu, CN
• Kun Zhou · Chengdu, CN
• Qing Liu · Tianjin, CN
• Linhua HUANG · Chengdu, CN
• Tao Sun · Nanjing, CN
• Bo Zhang · Shanghai, CN

Key dates

• Filing date: May 22, 2017
• Grant date: Jul 2, 2019
• Expiry date: Jul 29, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/136

Abstract

The present invention relates to the technical field of the power semiconductor device relates to a reverse conducting insulated gate bipolar transistor (RC-IGBT). The RC-IGBT comprises a P-type region, an N-type emitter region, a P-type body contact region, a dielectric trench, a collector region, and an electrical filed cutting-off region. The beneficial effect of the present invention is that, when compared with traditional RC-IGBT, the IGBT of the present invention can eliminate negative resistance effect and effectively improve the performance of forward and reverse conduction.