Tunnel heterojunctions in Group IV/Group II-IV multijunction solar cells
US10340405B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2009 |
| Grant date | Jul 2, 2019 |
| Priority date | — |
| Expiry date | Apr 28, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
A photovoltaic cell comprises a first subcell formed of a Group IV semiconductor material, a second subcell formed of a Group II-VI semiconductor material, and a tunnel heterojunction interposed between the first and second subcells. A first side of the tunnel heterojunction is formed by a first layer that is adjacent to a top surface of the first subcell. The first layer is of a first conductivity type, is comprised of a highly doped Group IV semiconductor material. The other side of the tunnel heterojunction is formed by a second layer that adjoins the lower surface of the second subcell. The second layer is of a second conductivity type opposite the first conductivity type, and is comprised of a highly doped Group II-VI semiconductor material. The tunnel heterojunction permits photoelectric series current to flow through the subcells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.