Light-emitting device
US10340423B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2018 |
| Grant date | Jul 2, 2019 |
| Priority date | — |
| Expiry date | Jan 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A light-emitting device includes a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; and a reflective layer located on the semiconductor structure and comprising an outer edge and a second area; wherein a distance between the first edge and the outer edge is between 0 μm and 10 μm, and the second area of the reflective layer is not less than 80% of the first area of the second semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.