Light emitting diode chip and fabrication method

US10340469B2 · kind B2 · utility

Assignee

• Xiamen Sanan Optoelectronics Technology Co., Ltd. · CN

Inventors

• Shu-fan YANG · Xiamen, CN
• Chun-Yi Wu · New Taipei, TW
• Chaoyu WU · Xiamen, CN
• Duxiang WANG · Xiamen, CN

Key dates

• Filing date: Dec 25, 2017
• Grant date: Jul 2, 2019
• Expiry date: Dec 25, 2037

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A light-emitting diode chip includes an electrical connection layer is arranged over the light-emitting surface of the light-emitting epitaxial laminated layer, which is not connected with isolation of the dielectric layer. After CMP treatment, the flat surface is plated with a transparent current spreading layer, which reduces horizontal conduction resistance of the transparent current spreading layer and replaces the metal spreading finger for horizontal conduction.