Process for the generation of thin inorganic films

US10344381B2 · kind B2 · utility

Assignee

• BASF SE

Inventors

• Julia Strautmann · Mannheim, DE
• Rocco Paciello · Bad Dürkheim, DE
• Thomas Schaub · Ludwigshafen, DE
• Felix Eickemeyer · Heidelberg, DE
• Daniel LOEFFLER · Ludwigshafen, DE
• Hagen Wilmer · Ludwigshafen, DE
• Udo Radius · Kleinrinderfeld, DE
• Johannes Berthel · Würzburg, DE
• Florian Hering · Würzburg, DE

Key dates

• Filing date: Jul 22, 2015
• Grant date: Jul 9, 2019
• Expiry date: Jul 22, 2035

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B25/10
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In detail the present invention relates a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state (Fig.) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1 and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, R2, R3, R5 and R6 are independent of each other hydrogen, an alkyl group, an aryl group or a trialkylsilyl group, n is an integer from 1 to 3, M is Ni or Co, X is a ligand which coordinates M, and m is an integer from 0 to 4.