Semiconductor devices and methods of manufacture
US10347489B2 · kind B2 · utility
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11References
20Claims
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Key dates
| Filing date | Jul 2, 2013 |
| Grant date | Jul 9, 2019 |
| Priority date | — |
| Expiry date | Jul 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device is presented. The method includes providing a semiconductor layer comprising silicon carbide, wherein the semiconductor layer comprises a first region doped with a first dopant type. The method further includes implanting the semiconductor layer with a second dopant type using a single implantation mask and a substantially similar implantation dose to form a second region and a junction termination extension (JTE) in the semiconductor layer, wherein the implantation dose is in a range from about 2×1013 cm−2 to about 12×1013 cm−2. Semiconductor devices are also presented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.