Low temperature poly silicon backboard, method for manufacturing the same and light-emitting device
US10347532B2 · kind B2 · utility
1Cited by
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18Claims
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Key dates
| Filing date | Oct 15, 2015 |
| Grant date | Jul 9, 2019 |
| Priority date | — |
| Expiry date | Jul 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a Low Temperature Poly Silicon (LTPS) backboard, a method for manufacturing the LTPS, and a light-emitting device. The LTPS backboard includes: a base substrate, and a thin film transistor (TFT) and a light blocking layer that are arranged above the base substrate, wherein the light blocking layer is arranged above the TFT, and the light blocking layer is configured for preventing an irradiation light from irradiating onto the TFT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.