Patent · US Active

Passivation layer having opening for under bump metallurgy

US10347556B2 · kind B2 · utility

1Cited by
4References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 30, 2018
Grant dateJul 9, 2019
Priority date
Expiry dateApr 30, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3511
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes: a chip having an active surface having connection pads disposed thereon; an encapsulant encapsulating at least portions of the chip; a connection member disposed on the active surface of the chip and including a redistribution layer electrically connected to the connection pads; a passivation layer disposed on the connection member; and an under bump metallurgy (UBM) layer at least partially embedded in the passivation layer and electrically connected to the redistribution layer of the connection member. The UBM layer includes a UBM pad partially embedded in the passivation layer and a UVM via penetrating through a portion of the passivation layer and electrically connecting the redistribution layer of the connection member and the UBM pad to each other. A portion of a side surface of the UBM pad is exposed through an opening formed in the passivation layer and the opening surrounds the UBM pad.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.