Image sensor with improved quantum efficiency for infrared radiation
US10347677B2 · kind B2 · utility
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Key dates
| Filing date | Mar 16, 2017 |
| Grant date | Jul 9, 2019 |
| Priority date | — |
| Expiry date | Mar 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/024
Abstract
An integrated image sensor with backside illumination includes a pixel. The pixel is formed by a photodiode within an active semiconductor region having a first face and a second face. A converging lens, lying in front of the first face of the active region, directs received light rays towards a central zone of the active region. At least one diffracting element, having a refractive index different from a refractive index of the active region, is provided at least partly aligned with the central zone at one of the first and second faces.
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