Charge storage cell and method of manufacturing a charge storage cell
US10347680B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 3, 2018 |
| Grant date | Jul 9, 2019 |
| Priority date | — |
| Expiry date | Oct 3, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A charge storage cell includes a semiconductor region having charge carriers of a first conductivity type, a first deep trench isolation structure, and a charge storage region located adjacent to the first deep trench isolation structure. The charge storage region has charge carriers of a second conductivity type different to the first conductivity type and extends along substantially all of the first deep trench isolation structure. A second deep trench isolation structure is located adjacent to the charge storage region and opposite the first deep trench isolation structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.