Semiconductor device and manufacturing method thereof
US10347750B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2017 |
| Grant date | Jul 9, 2019 |
| Priority date | — |
| Expiry date | Apr 11, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/011
Abstract
A semiconductor device includes a substrate, at least one gate, and an insulating structure. The substrate includes at least one semiconductor fin. The gate is disposed on the semiconductor fin. The gate has at least one end sidewall. The insulating structure is disposed adjacent to the gate. The insulating structure has a sidewall facing the gate, and the end sidewall of the gate is in contact with a portion of the sidewall of the insulating structure while leaves another portion of the sidewall of the insulating structure uncovered.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.