RAMO4 substrate and manufacturing method thereof
US10350725B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2017 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Jun 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A RAMO4 substrate is formed from single crystal represented by a formula of RAMO4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected form a group consisting of Hg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on at least one surface of the RAMO4 substrate. The epitaxially-grown surface includes a plurality of cleavage surfaces which are regularly distributed, and are separated from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.