Defect inspection method and apparatus
US10354372B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2016 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Oct 6, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In an ultrasonic inspection performed on an inspection object including a fine and multi-layer structure such as a semiconductor wafer and a MEMS wafer, a defect is detected by: separating a defect present inside from a normal pattern; obtaining an image of the inspection object by imaging the inspection object having a pattern formed thereon to enable a highly sensitive detection; generating a reference image that does not include a defect from the obtained image of the inspection object; generating a multi-value mask for masking a non-defective pixel from the obtained image of the inspection object; calculating a defect accuracy by matching the brightness of the image of the inspection object and the reference image; and comparing the calculated defect accuracy with the generated multi-value mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.