Patent · US Active

SRAM based memory structures and methods thereof

US10354716B2 · kind B2 · utility

2Cited by

6References

13Claims

0Family size

Assignee

Aspiring Sky Co. Limited · CN

Inventors

Zhijiong Luo · Poughkeepsie, US
Xiaoming Jin · Shanghai, CN
Shu Wang · Shakopee, US

Key dates

Filing date	Sep 14, 2017
Grant date	Jul 16, 2019
Priority date	—
Expiry date	Sep 14, 2037

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02D10/00
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Technologies are generally described herein for static random access memory (SRAM) based memory structures and methods thereof such as multi-bit non-volatile static random-access memory (nvSRAM) with arrayed SRAM and NVM or SRAM buffered one time programmable (OTP) memories, RRAMs or other resistive RAMs.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.