Patent · US Active

Method for producing a nitride compound semiconductor device

US10354865B2 · kind B2 · utility

1Cited by

4References

14Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Joachim Hertkorn · Neukirchen, DE
Lorenzo Zini · Regensburg, DE
Alexander Frey · Lappersdorf, DE

Key dates

Filing date	May 11, 2016
Grant date	Jul 16, 2019
Priority date	—
Expiry date	May 16, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02647
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for procuring a nitride compound semiconductor device is disclosed. In an embodiment the method includes growing a first nitride compound semiconductor layer onto a growth substrate, depositing a masking layer, growing a second nitride compound semiconductor layer onto the masking layer, growing a third nitride compound semiconductor layer onto the second nitride compound semiconductor layer such that the third nitride compound semiconductor layer has non-planar structures and growing a fourth nitride compound semiconductor layer onto the non-planar structures such that the fourth nitride compound semiconductor layer has an essentially planar surface. The method further includes growing a functional layer sequence of the nitride compound semiconductor device, connecting a side of the functional layer sequence located opposite to the growth substrate to a carrier and removing the growth substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.