Lossy MIM capacitor for on-die noise reduction
US10354948B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2017 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Nov 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to certain aspects of the present disclosure, a semiconductor die includes a decoupling capacitor between a first interconnect metal layer and a second interconnect metal layer of the die, a first supply rail formed from the second interconnect metal layer, and a resistive metal path coupled between the decoupling capacitor and the first supply rail. The decoupling capacitor may be a metal-insulator-metal (MIM) capacitor. In some embodiments, the resistive metal path includes a plurality of elongated segments, and one or more connecting segments, wherein each of the one or more connecting segments electrically couples a respective pair of the plurality of elongated segments. In some embodiments, the resistive metal path includes multiple vias coupled in series.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.