Semiconductor device
US10355016B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2018 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Apr 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including: a substrate including a top surface configured to extend in a first direction and a second direction that are perpendicular to each other; gate stack structures disposed on the substrate, spaced apart from one another in the first direction and configured to extend in the second direction; a first region in which levels of top surfaces of the gate stack structures are constant; a second region in which levels of top surfaces of the gate stack structures are stepped, the second region configured to surround at least a portion of the first region; and conductive lines disposed in the second region between the gate stack structures and configured to extend in the second direction in an uneven form.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.