Thin film transistor, method for fabricating the same, array substrate, and display device

US10355022B2 · kind B2 · utility

Assignee

• BOE Technology Group Co., Ltd. · CN

Inventors

• Jian Min · Beijing, CN
• Xiaolong Li · Beijing, CN
• Zhengyin Xu · Beijing, CN
• Tao Gao · Beijing, CN
• Dong Li · Beijing, CN
• Shuai Zhang · Shanghai, CN

Key dates

• Filing date: Dec 28, 2016
• Grant date: Jul 16, 2019
• Expiry date: Dec 28, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/421

Abstract

A thin film transistor, a method for fabricating the same, an array substrate, and a display device are provided. The method comprises forming an active layer on a substrate, wherein source-and-drain-to-be-formed regions of the active layer are thicker than a semiconductor region between the source-and-drain-to-be-formed regions, and by a patterning process, forming a gate on the active layer, and forming a pattern of source and drain in the source-and-drain-to-be-formed regions of the active layer.