Semiconductor device
US10355073B2 · kind B2 · utility
1Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2017 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Mar 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a lower electrode structure, an upper electrode structure, and a dielectric layer between the lower and upper electrode structures and on side surfaces and an upper surface of the lower electrode structure. The lower electrode structure includes a first lower electrode pattern having a cylindrical shape, a barrier layer on the first lower electrode pattern, and a second lower electrode pattern in a space defined by the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.