Monolayer thin film capacitor and method for manufacturing the same
US10355074B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Feb 7, 2018 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Feb 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5283
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A monolayer thin film capacitor includes: a bottom electrode; a top electrode; a dielectric layer disposed between the bottom electrode and the top electrode; a first via formed in the dielectric layer so as to penetrate through the dielectric layer; a second via formed in the top electrode so as to penetrate through the top electrode and having a greater width or a greater diameter than that of the first via; and a connection electrode disposed on inner sides of the first and second vias, electrically connected to the bottom electrode, and electrically insulated from the top electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.