Polycrystalline silicon thin film transistor and method of fabricating the same, and display apparatus

US10355107B2 · kind B2 · utility

Assignee

• BOE Technology Group Co., Ltd. · CN

Inventors

• Jian Min · Beijing, CN
• Xiaolong Li · Beijing, CN
• Tao Gao · Beijing, CN
• Liangjian Li · Beijing, CN
• Zhengyin Xu · Beijing, CN

Key dates

• Filing date: Jul 25, 2016
• Grant date: Jul 16, 2019
• Expiry date: Aug 15, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/2254
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present application discloses a method of fabricating a polycrystalline silicon thin film transistor, the method including forming an amorphous silicon layer on a base substrate having a pattern corresponding to a polycrystalline silicon active layer of the thin film transistor; the amorphous silicon layer having a first region corresponding to a source electrode and drain electrode contact region in the polycrystalline silicon active layer and a second region corresponding to a channel region in the polycrystalline silicon active layer; forming a first dopant layer on a side of the second region distal to the base substrate; forming a second dopant layer on a side of the first region distal to the base substrate; and crystallizing the amorphous silicon layer, the first dopant layer, and the second dopant layer to form the polycrystalline silicon active layer, the polycrystalline silicon active layer being doped with a dopant of the first dopant layer in the second region and doped with a dopant of the second dopant layer in the first region during the step of crystallizing the amorphous silicon layer.