Method of passivating and encapsulating III-V surfaces

US10355150B2 · kind B2 · utility

Assignee

• The United States of America as represented by the Secretary of the Army · US

Inventors

• Daniel B. Knorr, Jr. · Port Deposit, US
• Nathan C. Henry · Baltimore, US
• Joseph L. Lenhart · Port Deposit, US
• Neil F. Baril · Fredericksburg, US
• Meimei Tidrow · Annandale, US
• Sumith V. Bandara · Valencia, US
• Jan W. Andzelm · North East, US
• Kristen Smith Williams · Madison, US

Key dates

• Filing date: Jun 28, 2016
• Grant date: Jul 16, 2019
• Expiry date: Dec 14, 2036

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A method for producing a surfaced passivated, encapsulated surface III-V type II superlattice (T2SL) photodetector, more specifically a p-type heterojunction device by cleaning, etching and exposing the surface of a III/V material to solution mixtures which simultaneously removes oxides from the surface and encapsulates the surfaces.