Crystal growing systems and methods including a passive heater
US10358740B2 · kind B2 · utility
0Cited by
11References
25Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 25, 2014 |
| Grant date | Jul 23, 2019 |
| Priority date | — |
| Expiry date | Mar 24, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1068
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system for growing a crystal ingot from a melt is provided. The system includes a crucible assembly, a first heater, a second heater, and a passive heater. The crucible assembly includes a crucible and a weir separating an outer melt zone of the melt from an inner melt zone of the melt. The first heater is configured to supply thermal energy to the melt by conduction through the crucible. The second heater is configured to generate thermal radiation. The passive heater is configured to supply thermal energy to the outer melt zone by transferring thermal radiation generated by the second heater to the outer melt zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.