Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
US10358741B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2011 |
| Grant date | Jul 23, 2019 |
| Priority date | — |
| Expiry date | May 7, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/26
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed material 12 for liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer thereof, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.