Semiconductor device and semiconductor logic device
US10360963B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2017 |
| Grant date | Jul 23, 2019 |
| Priority date | — |
| Expiry date | Oct 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/20
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.