Semiconductor device and method of manufacturing the same
US10361260B2 · kind B2 · utility
1Cited by
2References
30Claims
0Family size
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Key dates
| Filing date | Aug 23, 2017 |
| Grant date | Jul 23, 2019 |
| Priority date | — |
| Expiry date | Aug 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1201
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a base substrate, a first transistor including a first semiconductor pattern, a first control electrode, a first input electrode, and a first output electrode, each of which is disposed on the base substrate, a second transistor including a second semiconductor pattern, a second control electrode, a second input electrode, and a second output electrode, and a plurality of insulating layers. A single first through part exposes the first control electrode and the first semiconductor pattern disposed on both sides of the first control electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.