Magneto-electric logic devices using semiconductor channel with large spin-orbit coupling

US10361292B2 · kind B2 · utility

Assignees

• Intel Corporation · US
• The Research Foundation for The State University of New York · US
• BOARD OF REGENTS OF THE UNIVERSITY OF NEBRASKA · US
• The Regents of the University of California · US

Inventors

• Dmitri E. Nikonov · معلمی نژاد, US
• Christian Binek · Lincoln, US
• Xia Hong · New Haven, US
• Jonathan P. Bird · Buffalo, US
• Kang L. Wang · Santa Monica, US
• Peter A. Dowben · Crete, US

Key dates

• Filing date: Feb 17, 2018
• Grant date: Jul 23, 2019
• Expiry date: Feb 17, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01F10/329
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

Antiferromagnetic magneto-electric spin-orbit read (AFSOR) logic devices are presented. The devices include a voltage-controlled magnetoelectric (ME) layer that switches polarization in response to an electric field from the applied voltage and a narrow channel conductor of a spin-orbit coupling (SOC) material on the ME layer. One or more sources and one or more drains, each optionally formed of ferromagnetic material, are provided on the SOC material.