Thin film transistor and method for manufacturing the same, array substrate and display device
US10361317B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 5, 2016 |
| Grant date | Jul 23, 2019 |
| Priority date | — |
| Expiry date | Sep 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A TFT and a method for manufacturing the same, an array substrate and a display device are provided. The TFT includes a first electrode pattern and a second electrode pattern arranged at an identical layer. The first electrode pattern includes a first strip-like portion extending in a first direction, and the second electrode pattern includes a bending portion surrounding a first end of the first strip-like portion. The second electrode pattern further includes a second strip-like portion extending from a first end of the bending portion in the first direction. A channel formation region of the TFT includes a region between the bending portion and the first strip-like portion, and a region between the second strip-like portion and the first strip-like portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.