Confined lateral switching cell for high density scaling
US10361368B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2017 |
| Grant date | Jul 23, 2019 |
| Priority date | — |
| Expiry date | Nov 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/84
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device including a via opening through a dielectric layer and an inert electrode having a conformal thickness present on sidewalls but recessed from the top of the via and a base surface of the via opening through the dielectric layer. A metal oxide layer provides a filament forming layer for the memory device and is present in direct contact with the inert electrode. The metal oxide layer also has a conformal thickness and has vertically orientated portions on the portion of the inert electrode overlying the sidewalls of the via opening, and horizontally orientated portions on the portion of the inert electrode overlying the base of the via opening. A reactive electrode is in direct contact with the metal oxide layer. Switching of the memory device includes a laterally orientated direction across the vertically orientated portion of the metal oxide layer in regions not modified by patterning of the conformal metal-oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.