Light emitting semiconductor devices with getter layer

US10361531B2 · kind B2 · utility

Assignee

• PHILIPS PHOTONICS GMBH · DE

Inventors

• Ulrich Weichmann · Aachen, DE
• Andreas Peter Engelhardt · Aachen, DE
• Johanna Sophie Kolb · Aachen, DE
• Marcel F. Schemmann · Maria Hoop, NL
• Holger Moench · Vaals, NL

Key dates

• Filing date: Feb 20, 2015
• Grant date: Jul 23, 2019
• Expiry date: Feb 20, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/815
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The invention describes a light emitting semiconductor device (100) comprising a substrate (120), a light emitting layer structure (155) and an AlGaAs getter layer (190) for reducing an impurity in the light emitting layer structure (155), the light emitting layer structure (155) comprising an active layer (140) and layers of varying Aluminum content, wherein the growth conditions of the layers of the light emitting layer structure (155) comprising Aluminum are different in comparison to the growth conditions of the AlGaAs getter layer (190). The AlGaAs getter layer (190) enables a reduction of the concentration of impurities like Sulfur etc. in the gas phase of a deposition equipment or growth reactor. The reduction of such impurities reduces the probability of incorporation of the impurities in the light emitting layer structure (155) which may affect the lifetime of the light emitting semiconductor device (100). The growth conditions are chosen out of the group Arsenic partial pressure, Oxygen partial pressure, deposition temperature, total deposition pressure and deposition rate of Aluminum. The invention further relates to a corresponding method of manufacturing such a light e…