Nanopore forming method and uses thereof
US10364507B2 · kind B2 · utility
1Cited by
0References
17Claims
0Family size
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Key dates
| Filing date | Aug 28, 2017 |
| Grant date | Jul 30, 2019 |
| Priority date | — |
| Expiry date | Sep 4, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R19/0092
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention relates to a method for making nanopores in thin layers or monolayers of transition metal dichalcogenides that enables accurate and controllable formation of pore within those thin layer(s) with sub-nanometer precision.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.