NAND flash memory with worldline voltage compensation using compensated temperature coefficients
US10366760B1 · kind B1 · utility
2Cited by
1References
4Claims
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Key dates
| Filing date | Jan 15, 2018 |
| Grant date | Jul 30, 2019 |
| Priority date | — |
| Expiry date | Jan 15, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3459
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present application provides a NAND flash memory with wordline voltage compensate, including wordlines. Each wordline corresponds to a wordline voltage with a compensated temperature coefficient. The wordlines are divided into a plurality of groups, each group corresponds to a compensated temperature coefficient. Each wordline corresponds to a wordline address, and the groups of wordlines are divided by at least a border according to wordline addresses, or divided by zones having fixed number of wordlines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.