Methods for forming a germanium island using selective epitaxial growth and a sacrificial filling layer
US10366884B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2018 |
| Grant date | Jul 30, 2019 |
| Priority date | — |
| Expiry date | Nov 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02488
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for obtaining a semiconductor island includes epitaxially growing a semiconductor structure over a substrate with a mask layer defining a region not covered by the mask layer. The semiconductor structure includes a first portion located adjacent to the mask layer and a second portion located away from the mask layer. The first portion has a first height that is less than a second height of a portion of the mask layer located adjacent to the first portion. The second portion has a third height that is equal to, or greater than, the second height. The method also includes forming a filling layer over at least the first portion; and, subsequently removing at least a portion of the semiconductor structure that is located above the second height. Devices made by this method are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.