Semiconductor device
US10366957B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 2018 |
| Grant date | Jul 30, 2019 |
| Priority date | — |
| Expiry date | May 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02P27/06
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a metal member (15), a first semiconductor chip (13), a second semiconductor chip (14), a first solder (24) and a second solder (25). A quantity of heat generated in the first semiconductor chip is greater than the second semiconductor chip. The second semiconductor chip is formed of a material having larger Young's modulus than the first semiconductor chip. The first semiconductor chip has a first metal layer (13a) connected to the metal member through a first solder (24) at a surface facing the metal member. The second semiconductor chip has a second metal layer (14a) connected to the metal member through a second solder (25) at a surface facing the metal member. A thickness of the second solder is greater than a maximum thickness of the first solder at least at a portion of the second solder corresponding to a part of an outer peripheral edge of the second metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.