Semiconductor device having switching elements to prevent overcurrent damage
US10366964B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2018 |
| Grant date | Jul 30, 2019 |
| Priority date | — |
| Expiry date | Apr 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a first semiconductor switching element having a first gate pad, a plurality of first emitter pads, and a first collector pad, a first wire for connecting adjacent pads out of the plurality of first emitter pads, a first output wire for connecting one of the plurality of first emitter pads to an output, a first controller for applying a gate voltage to the first gate pad, a first emitter wire that is directly connected to a first extraction pad which is any one pad of the plurality of first emitter pads, and is connected to the first controller to give a ground potential of the first controller, and a second semiconductor switching element having a second gate pad, a second emitter pad and a second collector pad connected to the output.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.