Transistor and display device having the same
US10367012B2 · kind B2 · utility
3Cited by
16References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2017 |
| Grant date | Jul 30, 2019 |
| Priority date | — |
| Expiry date | Aug 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/131
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A transistor includes a semiconductor layer comprising a channel portion, a first contact portion and a second contact portion, a gate electrode facing the floating gate, and a floating gate disposed between the semiconductor layer and the gate electrode, the floating gate being insulated from the semiconductor layer and the gate electrode. The floating gate comprises an oxide semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.